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538.958 (16) |
Физика конденсированного состояния (жидкое и твердое состояние) (349) |
SM ISO690:2012 SIRKELI, Vadim, RADEVICI, Ivan, IVANOVA, Galina, HUHTINEN, Hannu, SUSHKEVICH, Konstantin, NEDEOGLO, Natalia, NEDEOGLO, Dumitru, PATURI, Petriina. Infrared luminescence of nickel-doped ZnSe crystals. In: Știință, educație, cultura, 7 februarie 2014, Comrat. Comrat: Universitatea de Stat din Comrat, 2014, pp. 385-387. ISBN 978-9975-914-83-3.. ISSN 1857 - 2170. |
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Știință, educație, cultura 2014 | ||||||
Conferința "Ştiinţă, educaţie, cultură" Comrat, Moldova, 7 februarie 2014 | ||||||
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CZU: 538.958 | ||||||
Pag. 385-387 | ||||||
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Luminescent properties of nickel-doped ZnSe crystals with various impurity concentrations are investigated. The concentration of Ni2+ ions in ZnSe crystals has been varied from 0.001 to 0.5 at.%. Photoluminescent studies have confirmed the incorporation of Ni into ZnSe crystals. It is established that Ni forms multicharge (1+, 2+, 3+) acceptor centres in ZnSe, which are the quenching centres for visible and infrared photoluminescence. The emission band with maximum at 2612-2630 nm in infrared spectra of ZnSe:Ni crystals is attributed to 3T2(3F) → 3T1(3F) intrashell transitions within Ni2+ions. |
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Cuvinte-cheie Zinc selenide, nickel, Diluted magnetic semiconductors, Semiconducting II–VI materials, Luminescence, defects. |
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<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'> <dc:creator>Sirkeli, V.P.</dc:creator> <dc:creator>Radevici, I.V.</dc:creator> <dc:creator>Ivanova, G.N.</dc:creator> <dc:creator>Huhtinen, H.</dc:creator> <dc:creator>Suşchevici, C.D.</dc:creator> <dc:creator>Nedeoglo, N.D.</dc:creator> <dc:creator>Nedeoglo, D.D.</dc:creator> <dc:creator>Paturi, P.</dc:creator> <dc:date>2014</dc:date> <dc:description xml:lang='en'><p>Luminescent properties of nickel-doped ZnSe crystals with various impurity concentrations are investigated. The concentration of Ni2+ ions in ZnSe crystals has been varied from 0.001 to 0.5 at.%. Photoluminescent studies have confirmed the incorporation of Ni into ZnSe crystals. It is established that Ni forms multicharge (1+, 2+, 3+) acceptor centres in ZnSe, which are the quenching centres for visible and infrared photoluminescence. The emission band with maximum at 2612-2630 nm in infrared spectra of ZnSe:Ni crystals is attributed to 3T2(3F) → 3T1(3F) intrashell transitions within Ni2+ions.</p></dc:description> <dc:source>Știință, educație, cultura () 385-387</dc:source> <dc:subject>Zinc selenide</dc:subject> <dc:subject>nickel</dc:subject> <dc:subject>Diluted magnetic semiconductors</dc:subject> <dc:subject>Semiconducting II–VI materials</dc:subject> <dc:subject>Luminescence</dc:subject> <dc:subject>defects.</dc:subject> <dc:title>Infrared luminescence of nickel-doped ZnSe crystals</dc:title> <dc:type>info:eu-repo/semantics/article</dc:type> </oai_dc:dc>