The peculiarities of obtaining of tin and titanium oxide layers and semiconductor structures on their basis are described. The Roentgen diffraction results show that SnO2 and TiO2 layers possess crystalline tetragonal structure (anatas modification for TiO2).The results of element composition analysis and impedance investigations of the fabricated structures in the model chloride-sulfate solutions demonstrate that oxide/ SiO2/Si structures are obtained when Si substrates are used. In the case of InP substrates the oxide layer at the interface is not detected and the respective structure is oxide/InP. The results of corrosive investigations show that essential displacement of the corrosive potential to the anode region is observed in the case of deposition of SnO2 and TiO2 oxide layers on Si and InP crystals and fabrication of respective semiconductor structures. This fact demonstrates the availability of the utilization of these materials in photoelectrochemical applications.