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 SM ISO690:2012VLASOV, S., NASIROV, A., MAMATKARIMOV, O., ERGASHEVA, M.. Nonmonotonous Capacitance–Voltage Characteristics in Metal–Glass–Semiconductor Structures
. In: Surface Engineering and Applied Electrochemistry, 2008, nr. 3(44), pp. 250-251. ISSN 1068-3755. |
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  Surface Engineering and Applied Electrochemistry |
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| Numărul 3(44) / 2008 / ISSN 1068-3755 /ISSNe 1934-8002 | ||||||
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| Pag. 250-251 | ||||||
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The nature of nonmonotonous behavior of high-frequency capacitance–voltage characteristics of metal–glass–semiconductor structures is investigated. It is shown that the nonmonotonous variation in capacitance of metal–glass–semiconductor structures at inverse voltages can be caused by the presence of structure defects of acceptor nature in the glass in the layer adjacent to the glass–semiconductor interface.
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