Annealing influence on amorphous IGZO and AlN based TFTs

Beşleagă Corina; Stan George; Radu Robert; Trinca Liliana-Marinela; Galca Aurelian Catalin; Pintilie I.

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BEŞLEAGĂ, Corina, STAN, George, RADU, Robert, TRINCA, Liliana-Marinela, GALCA, Aurelian Catalin, PINTILIE, I.. Annealing influence on amorphous IGZO and AlN based TFTs. In: Materials Science and Condensed Matter Physics, Ed. 8-th Edition, 12-16 septembrie 2016, Chişinău. Chişinău: Institutul de Fizică Aplicată, 2016, Editia 8, p. 227. ISBN 978-9975-9787-1-2.

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Materials Science and Condensed Matter Physics
Editia 8, 2016

Conferința "International Conference on Materials Science and Condensed Matter Physics"
8-th Edition, Chişinău, Moldova, 12-16 septembrie 2016

Annealing influence on amorphous IGZO and AlN based TFTs

Pag. 227-227

Beşleagă Corina, Stan George, Radu Robert, Trinca Liliana-Marinela, Galca Aurelian Catalin, Pintilie I.

National Institute of Materials Physics Bucharest-Magurele

Disponibil în IBN: 1 august 2019

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Amorphous indium–gallium–zinc-oxide (a-IGZO) is an n-type semiconductor widely used in transparent electronic devices [1,2,3]. Due to its suitable properties like ~3 eV band gap, high charge mobility and good chemical stability this material is considered to be the lower-cost alternative for LTPS (low-temperature polysilicon) in high-pixel-density displays. The IGZO-based transistors are slightly photo-sensitive in visible domain. Their photo-sensitivity is boosted in ultra-violet (photon energy above 3 eV) range. This propriety is explored in this work in order to emphasize the photoconductivity of the IGZO semiconductor. IGZO thin films were fabricated by radio-frequency magnetron sputtering under various deposition regimes. The sputtered IGZO thin films were integrated in micro-sized thin film field effect transistors (TFTs) with 50 nm thick SiO2 gate dielectric layers. It was observed that the TFTs electrical output was improved after a soft thermal-treatment. A positive effect of structural modifications induced by such type of post-fabrication processing is thus suggested. No changes of IGZO crystalline status could be detected by X-ray diffraction, the films remaining amorphous at the sensitivity limit of the apparatus.The influence of the thermal-treatment on structural features such as interface roughness or density, were inferred by X-ray reflectivity measurements. These results are discussed with respect to the TFTs performance trends. Acknowledgments:This research was supported by the UEFISCDI PN-II-RU-TE-2014-4-1122.

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