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![]() BAKERENKOV, A.. The fitting parameters extraction of conversion model of the low dose rate effect in bipolar devices. In: Nanotechnologies and Biomedical Engineering, Ed. 1, 7-8 iulie 2011, Chișinău. Technical University of Moldova, 2011, Editia 1, pp. 236-238. ISBN 978-9975-66-239-0.. |
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Nanotechnologies and Biomedical Engineering Editia 1, 2011 |
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Conferința "International Conference on Nanotechnologies and Biomedical Engineering" 1, Chișinău, Moldova, 7-8 iulie 2011 | ||||||
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Pag. 236-238 | ||||||
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The Enhanced Low Dose Rate Sensitivity (ELDRS) in bipolar devices consists of in base current degradation of NPN and PNP transistors increase as the dose rate is decreased [1]. As a result of almost 20-year studying, the some physical models of effect are developed, being described in [2] in detail. Accelerated test methods, based on these models use in standards [3, 4]. In [5] the conversion model of the effect, that allows to describe the inverse S-shaped excess base current dependence versus dose rate, was proposed. This paper presents the problem of conversion model’s fitting parameters extraction. |
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Cuvinte-cheie Enhanced Low Dose Rate Sensitivity, ELDRS. bipolar devices, hardness assurance. |
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Dublin Core Export
<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'> <dc:creator>Bakerenkov, A.S.</dc:creator> <dc:date>2011</dc:date> <dc:description xml:lang='en'><p>The Enhanced Low Dose Rate Sensitivity (ELDRS) in bipolar devices consists of in base current degradation of NPN and PNP transistors increase as the dose rate is decreased [1]. As a result of almost 20-year studying, the some physical models of effect are developed, being described in [2] in detail. Accelerated test methods, based on these models use in standards [3, 4]. In [5] the conversion model of the effect, that allows to describe the inverse S-shaped excess base current dependence versus dose rate, was proposed. This paper presents the problem of conversion model’s fitting parameters extraction.</p></dc:description> <dc:source>Nanotechnologies and Biomedical Engineering (Editia 1) 236-238</dc:source> <dc:subject>Enhanced Low Dose Rate Sensitivity</dc:subject> <dc:subject>ELDRS. bipolar devices</dc:subject> <dc:subject>hardness assurance.</dc:subject> <dc:title>The fitting parameters extraction of conversion model of the low dose rate effect in bipolar devices</dc:title> <dc:type>info:eu-repo/semantics/article</dc:type> </oai_dc:dc>