Improvement of SiO2(Ge)SiO2/Si nanostructures by low dose &gamma;-radiation

Shishiyanu Sergiu; Shishiyanu Teodor; Yilmaz Ercan; Turan Rasit; Mogaddam  N.A.

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SHISHIYANU, Sergiu, SHISHIYANU, Teodor, YILMAZ, Ercan, TURAN, Rasit, MOGADDAM , N.A.. Improvement of SiO2(Ge)SiO2/Si nanostructures by low dose γ-radiation. In: Nanotechnologies and Biomedical Engineering, Ed. 1, 7-8 iulie 2011, Chișinău. Technical University of Moldova, 2011, Editia 1, pp. 203-206. ISBN 978-9975-66-239-0..

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Nanotechnologies and Biomedical Engineering
Editia 1, 2011

Conferința "International Conference on Nanotechnologies and Biomedical Engineering"
1, Chișinău, Moldova, 7-8 iulie 2011

Improvement of SiO2(Ge)SiO2/Si nanostructures by low dose γ-radiation

Pag. 203-206

Shishiyanu Sergiu¹, Shishiyanu Teodor¹, Yilmaz Ercan², Turan Rasit³, Mogaddam N.A.³

¹ Technical University of Moldova,
² Bolu Abant İzzet Baysal University,
³ Middle East Technical University

Disponibil în IBN: 22 iulie 2019

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Effect of γ – radiation on SiO2(Ge)SiO2/Si nanostructures structural defects was investigated by C-V measurements characterization. The obtained results demonstrated that by low dose γ-radiation (0.1Gy-150Gy) have been essentially reduced the negative charge defects in the nanocomposite structures SiO2(Ge)SiO2/Si. At higher doses (350Gy-4000Gy) the concentration of positive charge defects slowly increased and C-V characteristics moved to the position of the C-V characteristics of pure SiO2 (without nc-Ge) having the same curves configuration. At the average doses (200Gy-350Gy) the concentration of negative charge defects and positive charge defects were approximately equal and the radiation stability of samples was the highest.

Cuvinte-cheie
Ge nanocrystal, SiO2/Si, structural defects,  –radiation

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