Silicon remains the basic material for the production of photovoltaic (PV) devices despite the development of new generations of solar cells (SCs) based on new principles and technologies. However, broader terrestrial application of Si-based PV cells is still limited, since the cost of electricity generated by these devices is yet too high. In this regard, there is a wide search for new opportunities to reduce this cost by the use of new materials and structures for the production of silicon devices. In particular, good perspectives have SCs based on SiC heterostructures, which have achieved already an efficiency exceeding 15%. SiC devices are designed to operate at an elevated level of radiation and temperature. The constraint is the cost of SiC, which has to meet the requirements of the electronics industry, that averages at least $ 100 per 1 sq. inch. The difficulties for the application of SiC in electronics are characterized by the SiC polymorphism. SiC is usually an n-type semiconductor with the conductivity determined by the doping with N or P. The problem that limits the wider application of SiC can be solved by the use of amorphous and nanocrystalline SiC. The aim of this work is to prepare a PV Si-SiC structure based on amorphous SiC layers. Thin films of amorphous SiC were obtained by non-reactive magnetron sputtering in an Ar atmosphere using the VN-2000 system (Ukrrospribor). A previously synthesized SiC was used as a solid-state target. The depositions were carried out on a cold substrate of p-Si (100) with a resistivity of 2Ohm×cm. The SiO_x layer was removed from Si substrate by chemical etching in HF before the SiC film deposition. SiC film thickness control and the study of the surface morphology were performed by the tapping mode atomic force microscopy (AFM, NTEGRA Aura, NT-MDT, Russia) under a controlled atmosphere or low vacuum. The AFM image of the nano SiC layer is presented in Fig.1. The film thickness was about 8-40 nm, the height of the structural units of the film was 1-2 nm, and the linear dimensions of the order of tens of nanometers. The amorphous nature of the film is confirmed by the results of electron diffraction obtained on SiC film using a transmission electron microscope. The presence of the diffraction rings indicates the absence of the dominant orientation of the amorphous SiC film grown on the Si substrate. Thus, we demonstrate a heterostructure consisting of a specially treated by chemical etchants substrate of p-Si (100) and a layer of amorphous n-SiC. A Cu-grid was deposited on top of the SiC film. The reverse side of the substrate was covered by a continuous layer of Cu. An illuminated (AM1.5) load I-V characteristic of a SC elaborated on the base of p-Si/amorphous n-SiC nanolayer heterostructure is presented in Fig.2. The investigation of the SCs electrical and photoelectric properties shows that the entire space charge region is located in Si, where a physical p-n junction is formed.