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SM ISO690:2012 DRAGOMAN, Mircea L., TIGINYANU, Ion, DRAGOMAN, Daniela, DINESCU, Adrian, BRANISTE, Tudor, CIOBANU, Vladimir. Learning mechanisms in memristor networks based on GaN nanomembranes. In: Journal of Applied Physics, 2018, vol. 124, p. 0. ISSN 0021-8979. DOI: https://doi.org/10.1063/1.5034765 |
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Journal of Applied Physics | |
Volumul 124 / 2018 / ISSN 0021-8979 /ISSNe 1089-7550 | |
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DOI:https://doi.org/10.1063/1.5034765 | |
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We demonstrate experimentally that single crystalline GaN nanomembranes arranged in simple networks exhibit learning mechanisms such as habituation and dishabituation followed by storage of the response to a certain electrical stimulus. These artificial learning mechanisms are analogous to non-associative learning processes which are identical in simple animals and human beings. We found that the learning time depends on the number of GaN membranes in parallel, and this parameter decreases by 30% when three memristors are connected in parallel compared to the learning time of a single memristor. Moreover, an increased number of parallel memristors reduces the eventual asymmetry in the temporal response of the circuit at positive and negative step voltages. |
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Cuvinte-cheie Engineering controlled terms III-V semiconductors, Memristors, Nanostructures Engineering uncontrolled terms Artificial learning, Associative learning, Electrical stimuli, Learning mechanism, Negative steps, Simple networks, Single-crystalline, Temporal response Engineering main heading Gallium nitride |
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Crossref XML Export
<?xml version='1.0' encoding='utf-8'?> <doi_batch version='4.3.7' xmlns='http://www.crossref.org/schema/4.3.7' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.crossref.org/schema/4.3.7 http://www.crossref.org/schema/deposit/crossref4.3.7.xsd'> <head> <doi_batch_id>ibn-68766</doi_batch_id> <timestamp>1714569670</timestamp> <depositor> <depositor_name>Information Society Development Instiute, Republic of Moldova</depositor_name> <email_address>idsi@asm.md</email_address> </depositor> </head> <body> <journal> <journal_metadata> <full_title>Journal of Applied Physics</full_title> <issn media_type='print'>00218979</issn> </journal_metadata> <journal_issue> <publication_date media_type='print'> <year>2018</year> </publication_date> <issue></issue> </journal_issue> <journal_article publication_type='full_text'><titles> <title>Learning mechanisms in memristor networks based on GaN nanomembranes</title> </titles> <contributors> <person_name sequence='first' contributor_role='author'> <given_name>Mircea L.</given_name> <surname>Dragoman</surname> </person_name> <person_name sequence='additional' contributor_role='author'> <given_name>Ion</given_name> <surname>Tighineanu</surname> </person_name> <person_name sequence='additional' contributor_role='author'> <given_name>Daniela</given_name> <surname>Dragoman</surname> </person_name> <person_name sequence='additional' contributor_role='author'> <given_name>Adrian</given_name> <surname>Dinescu</surname> </person_name> <person_name sequence='additional' contributor_role='author'> <given_name>Fiodor</given_name> <surname>Branişte</surname> </person_name> <person_name sequence='additional' contributor_role='author'> <given_name>Vladimir</given_name> <surname>Ciobanu</surname> </person_name> </contributors> <publication_date media_type='print'> <year>2018</year> </publication_date> <pages> <first_page>0</first_page> <last_page>0</last_page> </pages> <doi_data> <doi>10.1063/1.5034765</doi> <resource>http://www.crossref.org/</resource> </doi_data> </journal_article> </journal> </body> </doi_batch>