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 SM ISO690:2012POPOV, Ivan. Полупроводниковые свойства в размерноограниченных объектах Bi0,88Sb0,12. In: Telecommunications, Electronics and Informatics, Ed. 5, 20-23 mai 2015, Chișinău. Chișinău, Republica Moldova: 2015, Ed. 5, pp. 123-124. ISBN 978-9975-45-377-6. |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
| Telecommunications, Electronics and Informatics Ed. 5, 2015 |
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Conferința "Telecommunications, Electronics and Informatics" 5, Chișinău, Moldova, 20-23 mai 2015 | ||||||
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| Pag. 123-124 | ||||||
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In this work was studied the charge carrier concentration of film single crystals. The measurements were made at temperature T=4.2 – 300 K. The thickness of the samples ranged from 0.2 mkm to 1.3 mkm. It was found that n~AT2.3. It allows to conclude that film single crystals Bi0,88Sb0,12 possess semiconducting properties. |
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| Cuvinte-cheie концентрация носителей, плёнки, запрещенная зона, Температура, толщина |
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DataCite XML Export
<?xml version='1.0' encoding='utf-8'?> <resource xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xmlns='http://datacite.org/schema/kernel-3' xsi:schemaLocation='http://datacite.org/schema/kernel-3 http://schema.datacite.org/meta/kernel-3/metadata.xsd'> <creators> <creator> <creatorName>Popov, I.A.</creatorName> <affiliation>Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu" al AŞM, Moldova, Republica</affiliation> </creator> </creators> <titles> <title xml:lang='ru'>Полупроводниковые свойства в размерноограниченных объектах Bi0,88Sb0,12</title> </titles> <publisher>Instrumentul Bibliometric National</publisher> <publicationYear>2015</publicationYear> <relatedIdentifier relatedIdentifierType='ISBN' relationType='IsPartOf'>978-9975-45-377-6</relatedIdentifier> <subjects> <subject>концентрация носителей</subject> <subject>плёнки</subject> <subject>запрещенная зона</subject> <subject>Температура</subject> <subject>толщина</subject> </subjects> <dates> <date dateType='Issued'>2015</date> </dates> <resourceType resourceTypeGeneral='Text'>Conference Paper</resourceType> <descriptions> <description xml:lang='en' descriptionType='Abstract'><p>In this work was studied the charge carrier concentration of film single crystals. The measurements were made at temperature T=4.2 – 300 K. The thickness of the samples ranged from 0.2 mkm to 1.3 mkm. It was found that n~AT2.3. It allows to conclude that film single crystals Bi0,88Sb0,12 possess semiconducting properties.</p></description> </descriptions> <formats> <format>application/pdf</format> </formats> </resource>
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