Rapid thermal annealing induced change of the mechanism of multiphonon resonant Raman scattering from ZnO nanorods
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URSAKI, Veaceslav, LUPAN, Oleg, CHOW, Lee, TIGINYANU, Ion, ZALAMAI, Victor. Rapid thermal annealing induced change of the mechanism of multiphonon resonant Raman scattering from ZnO nanorods. In: Solid State Communications, 2007, vol. 143, pp. 437-441. ISSN 0038-1098. DOI: https://doi.org/10.1016/j.ssc.2007.06.001
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Solid State Communications
Volumul 143 / 2007 / ISSN 0038-1098 /ISSNe 1879-2766

Rapid thermal annealing induced change of the mechanism of multiphonon resonant Raman scattering from ZnO nanorods

DOI:https://doi.org/10.1016/j.ssc.2007.06.001

Pag. 437-441

Ursaki Veaceslav1, Lupan Oleg23, Chow Lee3, Tiginyanu Ion1, Zalamai Victor1
 
1 Institute of Applied Physics, Academy of Sciences of Moldova,
2 Technical University of Moldova,
3 University of Central Florida
 
 
Disponibil în IBN: 10 aprilie 2018


Rezumat

Multiphonon Resonant Raman scattering (RRS) excited by 351.1 and 363.8 nm lines of an Ar+ laser was studied at temperatures from 10 to 300 K in as-grown and rapid thermal annealed (RTA) aluminum doped ZnO nanorods synthesized by an aqueous chemical deposition method using zinc sulfate, aluminum sulfate, and ammonia hydroxide as precursors. RTA of ZnO nanorods at temperatures 650-750{ring operator}C was found to result in changing the mechanism of RRS from incoming to outgoing. This change is suggested to be related to the RTA induced improvement of the optical properties of the nanorods.

Cuvinte-cheie
A.Semiconductors, B.Chemical synthesis, E.Inelastic light scattering, E.Luminescence