Observation of an fcc–Co nanolayer grown between CoO and amorphous Si
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LENK, D., ULLRICH, Aladin, ZDRAVKOV, Vladimir, MORARI, Roman, SIDORENKO, Anatolie, HÖRN, Siegfried, TIDECKS, Reinhard. Observation of an fcc–Co nanolayer grown between CoO and amorphous Si. In: Applied Physics A: Materials Science and Processing, 2017, vol. 123, pp. 1-4. ISSN 0947-8396. DOI: https://doi.org/10.1007/s00339-017-1375-6
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Applied Physics A: Materials Science and Processing
Volumul 123 / 2017 / ISSN 0947-8396

Observation of an fcc–Co nanolayer grown between CoO and amorphous Si

DOI:https://doi.org/10.1007/s00339-017-1375-6

Pag. 1-4

Lenk D.1, Ullrich Aladin1, Zdravkov Vladimir12, Morari Roman2, Sidorenko Anatolie2, Hörn Siegfried1, Tidecks Reinhard1
 
1 Institut für Physik, Universität Augsburg,
2 Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu" of the Academy of Sciences of Moldova
 
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Disponibil în IBN: 9 decembrie 2017


Rezumat

View references (27) The thermodynamically crystallographic phase of Co at ambient conditions is hexagonal-close-packed. However, it has been found that given a crystallographic support from a suitable substrate, the high-temperature face-centered-cubic phase can be stabilized in thin films. We performed cross-sectional high-resolution transmission electron microscopy on a Si substrate/Si buffer/Co/CoO/Cu41Ni59/Nb/Cu41Ni59/Si-cap heterostructure (all layer thicknesses in the nanometer range). We analyzed lattice spacings and angles of the Co layer and neighbouring layers. While in the present study, there is no obvious support for an fcc structure by the amorphous Si buffer and the CoO (spinel structure), only an fcc phase of the Co layer (of about 5 nm thickness) is in agreement with the obtained results. However, the detailed mechanism of phase stabilization remains unresolved.

Cuvinte-cheie
Cobalt compounds, High resolution transmission electron microscopy, Silicon, single crystals