In this work, the applications of the previously elaborated „hopping electrodeposition” approach for the deposition of gold nanodots on semiconductor surfaces [1] is addressed. As was demonstrated [1], one monolayer of Au nanodots can be routinely deposited via pulsed electrochemical deposition regardless of the morphology of the porous structure. Hopping electrodeposition enabled one to estimate the conductivity of semiconductor nanostructures with different thicknesses [2]. Moreover, taking into account the site-selective deposition on semiconductor regions with higher conductivity, the technological approaches for the deposition of Au nanodots along definite lines were developed [3]. Precise control of the deposition process of gold nanodots opens new possibilities for the creation of highly complex 3D hybrid nanostructures, in which the gold nanodots play a crucial role as catalysts [4]. As a result, this controlled deposition approach offers a versatile tool to engineering nanostructures with tailored properties and enhanced performance for various applications. The work was supported by the institutional subprogram 02.04.02 no. 4/FI «Development of technologies and investigation of the properties of layered semiconductor compounds, hybrid nanostructures and laser sources».