| Conţinutul numărului revistei |
| Articolul precedent |
| Articolul urmator |
 |
 91 0 |
 SM ISO690:2012YOVU, M., SHUTOV, Serghei, BOOLCHAND, Punit, KOLOMEYKO, Eduard, CIORBĂ, Valeriu, IOVU, S., POPESCU, Mihai A.. The effect of rare-earth impurity on the photodarkening relaxation in as-evaporated amorphous As2Se3:Pr and as 2Se3:Dy films. In: Journal of Optoelectronics and Advanced Materials, 2002, vol. 4, pp. 857-861. ISSN 1454-4164. |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
  Journal of Optoelectronics and Advanced Materials |
||||||
| Volumul 4 / 2002 / ISSN 1454-4164 | ||||||
|
||||||
| Pag. 857-861 | ||||||
|
||||||
 Descarcă PDF |
||||||
| Rezumat | ||||||
The effect of foreign impurity atoms (Dy and Pr) in as-evaporated amorphous As2Se3 thin films on the photodarkening relaxation was investigated. The photodarkening amplitude depends on the kind and concentration of rare-earth dopant, as well as on the thickness of the sample. The observed variation of photodarkening amplitude with the sample thickness is due on the amount of absorbed photons generating the photodarkening effect. The photodarkening kinetics is described by a stretched exponential function with the dispersion parameter α≤0.5, which indicates high dispersion of the relaxation process in untreated as-deposited chalcogenide films. |
||||||
| Cuvinte-cheie amorphous thin films, photodarkening, Rare-earth ions |
||||||
|
|
|
|
