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<creators>
<creator>
<creatorName>Iovu, M.A.</creatorName>
<affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Iovu, M.S.</creatorName>
<affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Shutov, S.D.</creatorName>
<affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Colomeico, E.P.</creatorName>
<affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Rebeja, S.Z.</creatorName>
<affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation>
</creator>
</creators>
<titles>
<title xml:lang='en'>Photoconductivity and transport properties of As-Se thin films</title>
</titles>
<publisher>Instrumentul Bibliometric National</publisher>
<publicationYear>2001</publicationYear>
<relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>1454-4164</relatedIdentifier>
<subjects>
<subject>As-Se thin films</subject>
<subject>Electrical transport</subject>
<subject>photoconductivity</subject>
</subjects>
<dates>
<date dateType='Issued'>2001-06-01</date>
</dates>
<resourceType resourceTypeGeneral='Text'>Journal article</resourceType>
<descriptions>
<description xml:lang='en' descriptionType='Abstract'><p>Steady-state and transient photoconductivity characteristics of thermally and laser-beam deposited chalcogenide amorphous films As<sub>40</sub>Se<sub>60</sub>&nbsp;and As<sub>50</sub>Se<sub>50</sub>&nbsp;are studied at varied light intensity and temperature. The lux-ampere characteristics are shown to change the power exponent from a value greater than 0.5 at low intensities to the value less than 0.5 at high intensities, indicating the change in recombination reaction. The transient photocurrents in step-function mode of excitation were found to be consistent with the model of trap-controlled non-stationary capture and recombination in exponentially distributed in energy hole traps. Evaluating of the trap energy distribution parameter independently from the photocurrent transients as well as from the dependence of steady-state photoconductivity measurements yields consistent results.</p></description>
</descriptions>
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