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 SM ISO690:2012KHADZHI, Peter, NADKIN, L.. Self-reflection effect in semiconductors in a two-pulse regime. In: Quantum Electronics, 2004, vol. 34, pp. 1173-1176. ISSN 1063-7818. DOI: https://doi.org/10.1070/QE2004v034n12ABEH002793 |
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  Quantum Electronics |
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| Volumul 34 / 2004 / ISSN 1063-7818 | ||||||
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| DOI:https://doi.org/10.1070/QE2004v034n12ABEH002793 | ||||||
| Pag. 1173-1176 | ||||||
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Peculiarities of reflection at the end face of a semi-infinite semiconductor in a two-pulse regime are studied. The reflection functions behave in a complex and ambiguous manner governed by the amplitudes of the fields of incident pulses. The possibility of a complete bleaching of the medium for the field in the M-band is predicted. |
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| Cuvinte-cheie boundary conditions, Electron transitions, Excitons, functions, laser pulses, Light polarization, Light reflection |
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