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 SM ISO690:2012MALKOV, Sergei, ANDRIESH, Andrei, VERLAN, Victor. X-ray solid state image device on the base of Me- a-As2Se3-Si structures. In: Proceedings of SPIE - The International Society for Optical Engineering, Ed. 1, 31 ianuarie - 1 februarie 1996, San Jose, California. Bellingham, Washington: SPIE, 1996, Vol.2654, pp. 139-147. ISBN 081942028X. ISSN 0277-786X. |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
 Proceedings of SPIE - The International Society for Optical Engineering Vol.2654, 1996 |
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Conferința "Solid State Sensor Arrays and CCD Cameras" 1, San Jose, California, Statele Unite ale Americii, 31 ianuarie - 1 februarie 1996 | ||||||
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The As 2Se 3-SiO 2-Si structure with As 2Se 3 for writing and Si for readout has been suggested for X-ray image application. In this structure the recording have been carried out under simultaneous projection of an X-ray pattern on the top semitransparent contact and application of the external voltage, but the erasing - under illumination of light from the range of the As 2Se 3 fundamental absorption and application of the opposite polarity external voltage. The charging kinetics was revealed to be described by exponential law with saturation. It was found that the charge is accumulated at the deep traps disposed at the As 2Se 3-SiO 2 interface. This structure make it possible to work in the integration small signal regime but the space separation of recording and readout layers provides undestroing repetitional readout of image. It was established that the dark relaxation of accumulated charge takes place due to the thermo-field emission of holes from traps according to Pool-Frenkel law. |
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| Cuvinte-cheie Engineering controlled terms Arsenic compounds, Light absorption, Readout systems, recording, Relaxation processes, Semiconducting silicon, X rays Engineering uncontrolled terms Electron traps, Pool-Frenkel law, Thermo-field emission Engineering main heading Solid state devices |
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