This paper presents the fabrication and mirrors passivation process of InGaAs/AlGaAs/GaAs narrow stripe (w = 4 μm) 980 nm emission wavelength laser diodes (LD). After mesa-stripe definition and Au-contact deposition procedures, a procedure of in-vacuum cleaving and in-situ passivation with λ/4 or λ/2-thick ZnSe layers was performed. 960 μm and 500 μm length laser diodes bars was fabricated as a result. Antireflection-high reflectivity (AR-HR) (5%/95%) coating were formed on the bars facets. Laser diodes were soldered p-junction-side down on copper submounts. The room temperature CW threshold current value of 20 mA and CW maximum output power of 440 mW at 760 mA pumping current were obtained. The far-field emission pattern of laser diodes is lateral single mode in large range of output powers (from 10 to 250 mW). These laser diodes were used for laser diode module fabrication. In this module the laser diodes was coupled with tapered single mode 9 μm/125 μm optical fibre with a fused microlens at the end. CW output optical power of 40 mW from the fibre was obtained at 240 mA operating current of the laser diode module.