InP as well as GaAs represents the most interesting semiconductor compound for electronics needs. Recently attention was concentrated on electron and hole trap investigations in InP single crystals and epitaxial layers by the deep level transient spectroscopy (DLTS) technique. The influence of electron irradiation and doping effect on the properties of traps in indium phosphide has been considered in I1 to 31. At the same time the influence of non-stoichiometry on the localised state spectrum of InP has not been fully investigated yet. The purpose of this note is to give an account of our investigations of trap characteristics in phosphorus enriched InP layers by using the DLTS technique. The layers involved have been obtained by implantation of phosphorus ions into (100)-oriented p-InP: Zn wafers grown by the liquid-encapsulated Czochralski method under argon pressure.