Articolul precedent |
Articolul urmator |
115 0 |
SM ISO690:2012 TIGINYANU, Ion, LANGA, Sergiu, SIRBU, Lilian, MONAICO, Eduard, STEVENS-KALCEFF, Marion A., FOLL, Helmut. Cathodoluminescence microanalysis of porous GaP and InP structures. In: EPJ Applied Physics, Ed. 10, 29 septembrie - 2 octombrie 2003, Batz-sur-Mer. Les Ulis: EDP Sciences, 2004, Vol. 27, Ediția 1-3, pp. 81-84. ISSN 12860042. DOI: https://doi.org/10.1051/epjap:2004043 |
EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
EPJ Applied Physics Vol. 27, Ediția 1-3, 2004 |
||||||
Conferința "Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors" 10, Batz-sur-Mer, Franța, 29 septembrie - 2 octombrie 2003 | ||||||
|
||||||
DOI:https://doi.org/10.1051/epjap:2004043 | ||||||
Pag. 81-84 | ||||||
|
||||||
Descarcă PDF | ||||||
Rezumat | ||||||
Electron microscopy and cathodoluminescence (CL) microanalysis were used for a comparative study of porous layers fabricated by electrochemical etching of n-GaP and n-InP substrates in aqueous solutions of sulfuric and hydrochloric acids. Both the CL and morphology of porous layers were found to depend upon the anodic current density. At high current density (100 mA/cm2) anodization leads to the formation of so-called current-line oriented pores while at low current densities the pores grow along (111) crystallographic directions. The porosity relief was found to give rise to spatial modulation of the CL intensity. The composition microanalysis proved the stoichiometry of porous GaP and InP skeletons, although we found considerable traces of oxygen in porous GaP layers. Self-induced voltage oscillations giving rise to a synchronous modulation of the diameter of pores and CL intensity were evidenced. |
||||||
Cuvinte-cheie cathodoluminescence, crystallography, current density, Electric potential, electrochemistry, etching, hydrochloric acid, Microanalysis, porosity, scanning electron microscopy, Semiconducting gallium compounds, Semiconducting indium phosphide, Stoichiometry, sulfuric acid |
||||||
|
Dublin Core Export
<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'> <dc:creator>Tighineanu, I.M.</dc:creator> <dc:creator>Langa, S.</dc:creator> <dc:creator>Sîrbu, L.</dc:creator> <dc:creator>Monaico, E.V.</dc:creator> <dc:creator>Stevens-Kalceff, M.</dc:creator> <dc:creator>Foll, H.</dc:creator> <dc:date>2004</dc:date> <dc:description xml:lang='en'><p>Electron microscopy and cathodoluminescence (CL) microanalysis were used for a comparative study of porous layers fabricated by electrochemical etching of n-GaP and n-InP substrates in aqueous solutions of sulfuric and hydrochloric acids. Both the CL and morphology of porous layers were found to depend upon the anodic current density. At high current density (100 mA/cm<sup>2</sup>) anodization leads to the formation of so-called current-line oriented pores while at low current densities the pores grow along (111) crystallographic directions. The porosity relief was found to give rise to spatial modulation of the CL intensity. The composition microanalysis proved the stoichiometry of porous GaP and InP skeletons, although we found considerable traces of oxygen in porous GaP layers. Self-induced voltage oscillations giving rise to a synchronous modulation of the diameter of pores and CL intensity were evidenced.</p></dc:description> <dc:source>EPJ Applied Physics (Vol. 27, Ediția 1-3) 81-84</dc:source> <dc:subject>cathodoluminescence</dc:subject> <dc:subject>crystallography</dc:subject> <dc:subject>current density</dc:subject> <dc:subject>Electric potential</dc:subject> <dc:subject>electrochemistry</dc:subject> <dc:subject>etching</dc:subject> <dc:subject>hydrochloric acid</dc:subject> <dc:subject>Microanalysis</dc:subject> <dc:subject>porosity</dc:subject> <dc:subject>scanning electron microscopy</dc:subject> <dc:subject>Semiconducting gallium compounds</dc:subject> <dc:subject>Semiconducting indium phosphide</dc:subject> <dc:subject>Stoichiometry</dc:subject> <dc:subject>sulfuric acid</dc:subject> <dc:title>Cathodoluminescence microanalysis of porous GaP and InP structures</dc:title> <dc:type>info:eu-repo/semantics/article</dc:type> </oai_dc:dc>