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 SM ISO690:2012TIGINYANU, Ion, URSAKI, Veaceslav, PODOR, Balint, CSONTOS, L., SHONTYA, Viktor. Raman scattering analysis of InGaAs/InP: Effect of rare earth (Dysprosium) addition during liquid phase epitaxial growth. In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, Ed. 8, 21-25 aprilie 1996, New Jersey. New Jersey: Institute of Electrical and Electronics Engineers Inc. (IEEE), 1996, Ediţia 8, pp. 602-605. ISSN 10928669. DOI: https://doi.org/10.1109/ICIPRM.1996.492320 |
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| Conference Proceedings - International Conference on Indium Phosphide and Related Materials Ediţia 8, 1996 |
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Conferința "8th International Conference on Indium Phosphide and Related Materials" 8, New Jersey, Statele Unite ale Americii, 21-25 aprilie 1996 | ||||||
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| DOI:https://doi.org/10.1109/ICIPRM.1996.492320 | ||||||
| Pag. 602-605 | ||||||
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High purity InGaAs layers were grown on semi-insulating InP substrates by liquid phase epitaxy by adding small amounts of rare earth element dysprosium to the melt. Raman scattering measurements were performed on the InGaAs layers and the frequency of the GaAs-like phonon mode was found to shift upwards with increasing Dy content in the growth melt. Raman scattering provided a nondestructive, simple and accurate means of characterizing InGaAs layers. |
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| Cuvinte-cheie Composition effects, Crystal growth from melt, Dysprosium, Film growth, Liquid phase epitaxy, Raman spectroscopy, Rare earth additions, Semiconducting gallium arsenide, Semiconducting indium phosphide, Semiconductor growth, Substrates |
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