Anodic oxidation under ultraviolet (UV) illumination and rapid photothermal processing technique used for high quality oxide preparation in terms of device surface passivation and gate or tunnel dielectrics are reported. A number of samples of SiO₂ thin films were prepared using this technique. It is shown that anodic oxidation under UV illumination followed by rapid photothermal processing (450°C, 15s) in the inert ambient yields the best optimization of the SiO₂ thin films properties. Avoiding high temperature process should result in a better performance of the semiconductor devices. Anodic oxidation under UV illumination at low temperature and post-oxidation photothermal processing can be a possible alternative to the furnace growth silicon oxide; not only because of the low temperature process, but also because this technology essential improves the oxides properties.