Self-induced voltage oscillations during anodic etching of n-InP and possible applications for three-dimensional microstructures
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LANGA, Sergiu, CARSTENSEN, Juergen, TIGINYANU, Ion, CHRISTOPHERSEN, Marc, FOLL, Helmut. Self-induced voltage oscillations during anodic etching of n-InP and possible applications for three-dimensional microstructures. In: Electrochemical and Solid-State Letters, 2001, vol. 4, pp. 50-52. ISSN 1099-0062. DOI: https://doi.org/10.1149/1.1370417
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Electrochemical and Solid-State Letters
Volumul 4 / 2001 / ISSN 1099-0062

Self-induced voltage oscillations during anodic etching of n-InP and possible applications for three-dimensional microstructures

DOI:https://doi.org/10.1149/1.1370417

Pag. 50-52

Langa Sergiu1, Carstensen Juergen1, Tiginyanu Ion23, Christophersen Marc1, Foll Helmut1
 
1 Christian-Albrechts University of Kiel,
2 Institute of Applied Physics, Academy of Sciences of Moldova,
3 Technical University of Moldova
 
 
Disponibil în IBN: 16 ianuarie 2024


Rezumat

Voltage oscillations were observed during anodic etching of (100)-oriented n-InP substrates in an aqueous solution of HCl at high constant current density. Under certain conditions, the oscillations lead to a synchronous modulation of the diameters of pores on large areas of the samples which indicates a correlation between the phases of the oscillations in the pores. These self-induced diameter oscillations may be useful for three-dimensional microstructuring of n-InP and thus for the design and fabrication of new photonic materials.

Cuvinte-cheie
Crystal microstructure, current density, Electron device manufacture, etching, hydrochloric acid, Modulation, Optical design, oscillations, photoluminescence, porosity, Three dimensional, Threshold voltage