Porosity is an effective tool for engineering fundamental properties of semiconductor materials including the band gap, band structure, phonon spectrum, refractive indices, resistivity, thermal conductivity, etc. Nano-porous Si exhibits luminescence at wavelengths dependent on the dimensions of the porous skeleton. [1] More recently, anodic etching techniques have been used for fabricating porous structures in III-V compounds. [2] Compared with porous silicon, III-V materials have a number of important advantages related to their chemical composition and acentric properties. In particular, porous III-V compounds exhibit Fröhlich-type surface-related vibrations with porositytunable frequencies and efficient optical second harmonic generation. [3,4] The enhanced non-linear optical response and luminescence from porous III-V compounds may enable the development of a fully integrated light source and frequency converter sub-systems. In addition, the anisotropy of III-V materials with respect to chemical etching may also enable the production of ordered arrays of pores with the possibility of 2 and 3 dimensional structures for photonic applications including Bragg mirrors, Fabry Perot filters and waveguides, etc. These applications/ device structures may be able to be integrated into optoelectronic circuits.