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 SM ISO690:2012SHISHIYANU, Sergiu, SHISHIYANU, Teodor. Impact of light quantum in rapid photothermal diffusion of Zn in GaAs. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 33, 11-13 octombrie 2010, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2010, Vol. 1, pp. 251-254. ISBN 978-142445781-6. DOI: https://doi.org/10.1109/SMICND.2010.5650620 |
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| Proceedings of the International Semiconductor Conference Vol. 1, 2010 |
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Conferința " International Semiconductor Conference" 33, Sinaia, Romania, 11-13 octombrie 2010 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.2010.5650620 | ||||||
| Pag. 251-254 | ||||||
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The experimental results of the Rapid Photothermal Diffusion (RPD) of Zn in GaAs and p-n junction formation, model and role of quantum factor in this process are presented in this paper. The p-n junctions with depth of 0.2 - 1.2mu;m have been obtained by RPD at 600-950°C for 6 - 60s diffusion time for solar cells and microelectronic application. The diffusion coefficients and activation energies of the RPenhanced diffusion at low (N0< 4×1019cm-3) and high (N0>1× 1020cm-3) concentrations of Zn in GaAs were analysed. The activation energy of RP- diffusion is lower than that of the conventional furnace diffusion and diffusion coefficient is higher by 1-2 orders of magnitude. The proposed model and calculated wavelength dependence of RP-diffusion coefficient, D(λ), are in accordance with experimental results. |
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| Cuvinte-cheie Conventional furnace, Diffusion Coefficients, Diffusion time, GaAs, Light quanta, Microelectronic applications, Orders of magnitude, P-n junction, P-n junction formation, Photo-thermal, Rapid photothermal processing, Wavelength dependence, Zn enhanced diffusion |
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