Dielectric relaxation in As10Se90 amorphous film near the glass transition temperature

Yovu M.; Vasiliev Ion; Shpotyuk Oleh

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YOVU, M., VASILIEV, Ion, SHPOTYUK, Oleh. Dielectric relaxation in As10Se90 amorphous film near the glass transition temperature. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 32, 12-14 octombrie 2009, San Antonio. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2009, Vol. 2, pp. 371-374. ISBN 978-142444413-7. DOI: https://doi.org/10.1109/SMICND.2009.5336702

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Proceedings of the International Semiconductor Conference
Vol. 2, 2009

Conferința " International Semiconductor Conference"
32, San Antonio, Statele Unite ale Americii, 12-14 octombrie 2009

Dielectric relaxation in As₁₀Se₉₀ amorphous film near the glass transition temperature

DOI:https://doi.org/10.1109/SMICND.2009.5336702

Pag. 371-374

Yovu M.¹, Vasiliev Ion¹, Shpotyuk Oleh²

¹ Institute of Applied Physics, Academy of Sciences of Moldova,
² Scientific Research Company „CARAT“, Livov. Ukraine

Proiecte:

Menționat în lucrare: 3745 Modificări structurale post-tehnologice a semiconductorilor calcogenici vitroşi pentru aplicaţii în dispozitive multifuncţionale

Disponibil în IBN: 12 decembrie 2023

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Rezumat

The quasi-static capacitance of As₁₀Se₉₀ amorphous film was studied in cycles of heating and cooling near the glass transition temperature T_g=343 K. Features in the capacitance behavior such as the nonexponential relaxation and non-Arrhenius form of time relaxations in dependence on temperature are revealed. It was accepted, that the capacitance measurements allow finding the glass transition in thin amorphous film of As₁₀Se₉₀ which is accompanied by freezing of some charged molecular dipoles.

Cuvinte-cheie
Amorphous films, capacitance, Capacitance measurement, Dielectric materials, Dielectric relaxation, glass, heating, Secondary batteries, Semiconducting selenium compounds, Superconducting transition temperature