AlGaAs native oxides in the fabrication of high performance laser diodes

Syrbu Alexei; Mereutza Alexandru; Suruceanu Grigore; Yakovlev Vladimir; Caliman Andrei; Vieru Stanislav

Articolul precedent

Articolul urmator

145

SM ISO690:2012

SYRBU, Alexei, MEREUTZA, Alexandru, SURUCEANU, Grigore, YAKOVLEV, Vladimir, CALIMAN, Andrei, VIERU, Stanislav. AlGaAs native oxides in the fabrication of high performance laser diodes. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 18, 11-14 octombrie 1995, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 1995, pp. 289-292. DOI: https://doi.org/10.1109/SMICND.1995.494918

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Proceedings of the International Semiconductor Conference 1995

Conferința "International Semiconductor Conference"
18, Sinaia, Romania, 11-14 octombrie 1995

AlGaAs native oxides in the fabrication of high performance laser diodes

DOI:https://doi.org/10.1109/SMICND.1995.494918

Pag. 289-292

Syrbu Alexei, Mereutza Alexandru, Suruceanu Grigore, Yakovlev Vladimir, Caliman Andrei, Vieru Stanislav

Technical University of Moldova

Disponibil în IBN: 8 decembrie 2023

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Rezumat

Some results on AlGaAs native oxides growth and their application in the fabrication of high performance laser diodes are presented. These native oxides have been used extensively in the formation of laser diodes with the active layer width of the order of 1 μm as well as for decreasing the laser diode mirrors reflectivity in the interval from 0.33 to 0.02.

Cuvinte-cheie
oxides, Semiconducting gallium arsenide, Semiconductor device manufacture, Semiconductor growth, Semiconductor lasers

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