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 SM ISO690:2012RUSU, Emil, BUDIANU, Elena, NAN, Stelian, PURICA, Munitzer. Schottky barrier on the InGaAs/InP heterostructures grown by the Cl-VPE technique for photodetectors. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 19, 7-11 octombrie 1997, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 1996, Vol. 1, pp. 211-214. DOI: https://doi.org/10.1109/SMICND.1996.557344 |
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| Proceedings of the International Semiconductor Conference Vol. 1, 1996 |
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Conferința "International Semiconductor Conference" 19, Sinaia, Romania, 7-11 octombrie 1997 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.1996.557344 | ||||||
| Pag. 211-214 | ||||||
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The Schottky barriers of Ag, Ti, Ni, on n and p iso-type heterostructures of In0.53Ga0.47 As/InP, grown by the Cl-VPE technique, have shown that values of 0.6 eV for Ag/p-InGaAs barrier height and of 0.46 eV on n-InGaAs, by growing an n-InP iterlayer may be obtained. |
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| Cuvinte-cheie Electrons, Epitaxial growth, Heterojunctions, Lattice vibrations, photodetectors, Semiconducting indium compounds, Semiconducting indium phosphide, Semiconductor doping, Vapor phase epitaxy |
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