Transport properties of CdSb single crystals

Roznovan Yu.; Arushanov Ernest; Popov V.

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ROZNOVAN, Yu., ARUSHANOV, Ernest, POPOV, V.. Transport properties of CdSb single crystals. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 20, 7-11 octombrie 1997, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 1997, Vol. 1, pp. 57-58. DOI: https://doi.org/10.1109/SMICND.1997.651548

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Proceedings of the International Semiconductor Conference
Vol. 1, 1997

Conferința "International Semiconductor Conference"
20, Sinaia, Romania, 7-11 octombrie 1997

Transport properties of CdSb single crystals

DOI:https://doi.org/10.1109/SMICND.1997.651548

Pag. 57-58

Roznovan Yu., Arushanov Ernest, Popov V.

Academy of Sciences of Moldova

Disponibil în IBN: 6 decembrie 2023

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Rezumat

The results of the transport phenomena measurements on p-CdSb are presented. For the first time the phonon drag effect is investigated in this material. From the results of thermoelectric power and the Hall coefficient measurements values of the density of states effective mass at the temperature range investigated have been calculated.

Cuvinte-cheie
Anisotropy, Crystal orientation, Electron transport properties, Electronic density of states, Fermi level, Hall effect, phonons, Semiconducting cadmium compounds, thermoelectricity

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