Photovaricaps on ZnIn2S4 and CdGaInS4
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RADAUTSANU, Sergiu, ARAMĂ, Efim, ZHITAR, V., MOLDOVYAN, Nikolay. Photovaricaps on ZnIn2S4 and CdGaInS4. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 20, 7-11 octombrie 1997, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 1997, Vol. 1, pp. 267-270. DOI: https://doi.org/10.1109/SMICND.1997.651595
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Proceedings of the International Semiconductor Conference
Vol. 1, 1997
Conferința "International Semiconductor Conference"
20, Sinaia, Romania, 7-11 octombrie 1997

Photovaricaps on ZnIn2S4 and CdGaInS4

DOI:https://doi.org/10.1109/SMICND.1997.651595

Pag. 267-270

Radautsanu Sergiu, Aramă Efim, Zhitar V., Moldovyan Nikolay
 
Academy of Sciences of Moldova
 
 
Disponibil în IBN: 6 decembrie 2023


Rezumat

The paper presents the results of investigation of photovaricaps based on Pt - ZnIn2S4 (CdGaInS4) with the working spectral region corresponding to the impurity band of absorption. The parameters of the (103 Hz) photovaricaps having the super position coefficient of capacity (4 - 20) and the Quality factor (10 - 60) have been defined.

Cuvinte-cheie
Absorption spectroscopy, Crystal impurities, Semiconducting cadmium compounds, Semiconducting zinc compounds