Preparation of CuInSe2 by e-beam ablation technology and properties of thin films - Solar cell components

Andriesh Andrei; Verlan Victor

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ANDRIESH, Andrei, VERLAN, Victor. Preparation of CuInSe2 by e-beam ablation technology and properties of thin films - Solar cell components. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 24, 9-13 octombrie 2001, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2001, Vol. 1, pp. 173-176. DOI: https://doi.org/10.1109/SMICND.2001.967439

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Proceedings of the International Semiconductor Conference
Vol. 1, 2001

Conferința "International Semiconductor Conference"
24, Sinaia, Romania, 9-13 octombrie 2001

Preparation of CuInSe₂ by e-beam ablation technology and properties of thin films - Solar cell components

DOI:https://doi.org/10.1109/SMICND.2001.967439

Pag. 173-176

Andriesh Andrei, Verlan Victor

Institute of Applied Physics, Academy of Sciences of Moldova

Disponibil în IBN: 29 noiembrie 2023

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We used a new technological method of pulsed electron beam (e-beam) ablation to prepare high quality CuInSe₂ (CIS) thin films. This method is analogous to pulsed UV-laser ablation but costs significantly lower. In this method, the CIS deposition was made by pulsed, high current, and magnetically self pinched electron beam produced in a low pressure channel spark camera at the following conditions: high voltage of 10-20 kV, pulse duration of 100 ns, repetition rate of 1-5 Hz, power density < 500 MW/cm², argon pressure of 1-3 Pa, substrate temperatures of 250-550°C. CIS thin films are found to have a strong preferential (112) orientation, the chalcopyrite structure, columnar grain microstructure, and specular surface consisting of a smooth background of closely arranged grains as well as precipitates, and spherical particules disposed on the film surface. The Cu/In ratio in the films was found to be temperature dependent and in the range of 0.9-1.2. A well-defined absorption edge near the band gap with the energy gap of Eg=0.99 eV was observed for CIS films. Selenium doping procedure of the In-rich thin films deposited at T_sub=250°C were made to improve the microstructure of these films.

Cuvinte-cheie
Crystal microstructure, Crystal orientation, Electron beams, Energy gap, Film preparation, Grain size and shape, laser ablation, Precipitation (chemical), Selenium, Semiconductor doping, Solar cells, thin films

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