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 SM ISO690:2012ANDRIESH, Andrei, VERLAN, Victor, MALAHOV, Ludmila. Preparation of CIGS solar cell components by improved e-beam ablation technology and control of their final parameters. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 25, 8-12 octombrie 2002, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2002, Vol. 1, Ediția 25, pp. 199-202. ISBN 0780374401. DOI: https://doi.org/10.1109/SMICND.2002.1105830 |
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 Proceedings of the International Semiconductor Conference Vol. 1, Ediția 25, 2002 |
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Conferința "25th International Semiconductor Conference" 25, Sinaia, Romania, 8-12 octombrie 2002 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.2002.1105830 | ||||||
| Pag. 199-202 | ||||||
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Two step technology of deposition of CuIn1-xGaxSe2 (CIGS) polycrystalline films was developed: depositing with the help of a "e-beam ablation" process at 250°C and subsequent selenization at 500°C. X-ray diffraction analysis of films showed chalcopyrite structure with stringent orientation 〈112〉. Thin films have optical absorption coefficients in the 104 cm-1 range and the band gaps are 1.0, 1,4 and 1,65 eV for x = 0, 0.25, 1.0. The method of admittance spectroscopy for determination of density of concentration of deep states (N(E)) was applied for optimization of deposition process and photovoltaic properties. The continuous distribution N(E) have been found. |
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| Cuvinte-cheie ablation, Copper alloys, Copper compounds, Copper metallography, deposition, Energy gap, Gallium alloys, Indium alloys, Light absorption, semiconductor alloys, Solar cells, thin films, X ray powder diffraction |
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