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 SM ISO690:2012VASILIEV, Ion, HAREA, Diana, KOLOMEYKO, Eduard, YOVU, M.. Persistent photoconductivity effect in amorphous As2Se3:Sn thin films. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 26, 28 septembrie - 2 octombrie 2003, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2003, Vol. 1, Ediția 26, pp. 143-146. ISBN 0780378210. DOI: https://doi.org/10.1109/SMICND.2003.1251364 |
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 Proceedings of the International Semiconductor Conference Vol. 1, Ediția 26, 2003 |
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Conferința "26th International Semiconductor Conference" 26, Sinaia, Romania, 28 septembrie - 2 octombrie 2003 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.2003.1251364 | ||||||
| Pag. 143-146 | ||||||
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Persistent photoconductivity effects have been studied in amorphous As2Se3 films doped with Sn impurity using both transient and steady-state photocurrent measurements. From the photocurrent spectra the broad distributions of defect states in the band gap of As2Se3:Snx(x>0.5 at.% Sn) samples was evaluated. It was shown that these states contribute significantly to the persistent photoconductivity. |
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