Raman and infrared spectroscopy are efficient methods for obtaining information on the local structure of the disordered material, especially, when the composition is varied. In particular, Micro-Raman spectroscopy have been used for study of the ternary Ge _x As _x Se _1-2x glass system, for which different composition in dependence of it mean coordination number Z exists in different phases - floppy, intermediate and stressed rigid. In this paper we report experimental results and analysis of Micro-Raman spectra for both thermally as-deposited and for laser irradiated amorphous Ge _x As _x Se _1-2x thin films (x=0.07; 0.09 and 0.14, with mean coordination number Z=2.21; 2.27 and 2.42, respectively), for which glassy system situated in the region of floppy and intermediate phases. It was shown that for all investigated samples the measured Micro-Raman spectra consists from three vibrational modes located at around ν=193 cm ^-1 , ν=255 cm ^-1 and ν=475 cm ^-1 . It was shown that position and intensity of these vibrational bands slightly depend on the composition and of the material state (thin film or powder). It was established that for the Ge _0.14 As _0.14 Se _0.72 composition with the mean coordination number Z=2.42, situated in the region of intermediate phase, the probability of existence of the tetragonal (pyramids As(Se _1/2 ) ₃ and tetrahedral structural units Ge(Se _1/2 ) ₄ is the same. For all samples of the glass composition Ge _0.14 As _0.14 Se _0.72 the ratio of the intensity of both main vibration peaks centered at around ν =193 cm ^-1 and ν =255 cm ^-1 remain unchanged.