The experimental results of investigations of the image recording process at simultaneous application of electric field and light exposure in the n-Ge/As₂Se₃-Al, Me-As₂S₃/₂S₃-Al, and Me-In₂Se₃/₂S₃-Al heterostructures are presented. The sensitivity of the recording structures and the diffraction efficiency of elementary holograms depend on the strength and polarity of the electric field, light intensity, electrode material, and density of the recorded information. An increase of the sensitivity arid the diffraction efficiency was established under additional illumination and when the polarity of the applied voltage pulses was reversed.