| Conţinutul numărului revistei |
| Articolul precedent |
| Articolul urmator |
 112 0 |
 SM ISO690:2012SARUA, Andrei, TIGINYANU, Ion, URSACHI, Veaceslav, IRMER, Gert, MONECKE, Jochen, HARTNAGEL, Hans Ludwig. Charge carrier distribution in free-standing porous GaP membranes studied by Raman spectroscopy. In: Solid State Communications, 1999, vol. 112, pp. 581-585. ISSN 0038-1098. DOI: https://doi.org/10.1016/S0038-1098(99)00385-3 |
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  Solid State Communications |
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| Volumul 112 / 1999 / ISSN 0038-1098 /ISSNe 1879-2766 | ||||||
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| DOI:https://doi.org/10.1016/S0038-1098(99)00385-3 | ||||||
| Pag. 581-585 | ||||||
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| Rezumat | ||||||
Free-standing porous GaP membranes were fabricated by anodic etching of (111)-oriented crystalline substrates in H2SO4 aqueous solution. The formation of a column-shaped porous structure with average structure dimension of 50 nm was proved by SEM-investigations. Raman measurements on both as-grown bulk and porous GaP were performed. Porous membranes were measured under different filling condition of the pores either with air or with a methanol-ethanol mixture. The theoretically predicted downward shift of the surface-related mode situated between the LO- and TO-modes in spectra from porous membranes related to the environment change was detected. The spectra of porous membranes can be interpreted as a superposition of those of depleted surface layers and of GaP-skeleton containing free carriers. This interpretation is based on both a Schottky-model approach and a numerical solution of the Poisson-equation. |
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| Cuvinte-cheie charge carriers, Crystal orientation, Crystalline materials, etching, light scattering, mixtures, porous materials, Raman spectroscopy, scanning electron microscopy, Semiconductor growth, Solutions, Substrates |
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