Persistent photoconductivity and optical quenching of photocurrent in GaN layers under dual excitation

Ursaki Veaceslav; Tiginyanu Ion; Ricci P.C.; Anedda Alberto; Hubbard Seth M.; Pavlidis Dimitris

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URSAKI, Veaceslav, TIGINYANU, Ion, RICCI, P.C., ANEDDA, Alberto, HUBBARD, Seth M., PAVLIDIS, Dimitris. Persistent photoconductivity and optical quenching of photocurrent in GaN layers under dual excitation. In: Journal of Applied Physics, 2003, vol. 94, pp. 3875-3882. ISSN 0021-8979. DOI: https://doi.org/10.1063/1.1604950

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Journal of Applied Physics

Volumul 94 / 2003 / ISSN 0021-8979 /ISSNe 1089-7550

Persistent photoconductivity and optical quenching of photocurrent in GaN layers under dual excitation

DOI:https://doi.org/10.1063/1.1604950

Pag. 3875-3882

Ursaki Veaceslav¹², Tiginyanu Ion¹², Ricci P.C.³, Anedda Alberto³, Hubbard Seth M.⁴, Pavlidis Dimitris⁴

¹ Institute of Applied Physics, Academy of Sciences of Moldova,
² Technical University of Moldova,
³ University of Cagliari,
⁴ University of Michigan

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Menționat în lucrare: ME2-3013 Phonon Engineering in III-V Nitrides for Device Applications

Disponibil în IBN: 2 noiembrie 2023

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Rezumat

The persistent photoconductivity (PPC) and optical quenching (OQ) of photocurrents in GaN layers were observed under dual excitation. The relation between PPC and OQ of photoconductivity were studied by the exciting the samples with two beams of monochromatic radiation of various wavelenghts. The possible nature of the defects responsible for optical metastability of GaN were also discussed.

Cuvinte-cheie
Engineering controlled terms Hole traps, Luminescence, photoconductivity, Photocurrents, Quenching Engineering uncontrolled terms Optical quenching Engineering main heading Semiconducting gallium compounds