The Hall effect is investigated in oriented single crystals of a new diluted group II-V semiconductor p-CdSb doped with 2 at % of Ni in the temperature interval of T = 1.5-300 K and pulsed magnetic fields up to B = 25 T. A non-linear dependence of the Hall resistivity, ρ_H, on B is observed, which is strongly pronounced below ∼10 K and still exists even up to 300 K. From the analysis of _ρH(5) a positive normal, p _N = RQB, and a negative anomalous, ρ_A, contributions are obtained. The normal Hall coefficient, R₀, is determined pre-sumably by activation of holes into the valence band, accompanied with a minor contribution of itinerant holes from the acceptor band at lowest T, whereas ρ_A below ∼77 K scales with resisitivity approximately as ρⁿ (n = 1.6 ± 0.1). The anomalous contribution to the Hall effect is attributable to presence of magnetic Ni_1-xSb _x nanoclusters, which have been found previously from investigation of magnetic properties of p-CdSb:Ni.