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 SM ISO690:2012SHISHIYANU, Sergiu, SHISHIYANU, Teodor, RAILEAN, Sergey. Shallow p-n junctions formed in silicon using pulsed photon annealing. In: Semiconductors, 2002, vol. 36, pp. 581-587. ISSN 1063-7826. DOI: https://doi.org/10.1134/1.1478552 |
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  Semiconductors |
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| Volumul 36 / 2002 / ISSN 1063-7826 | ||||||
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| DOI:https://doi.org/10.1134/1.1478552 | ||||||
| Pag. 581-587 | ||||||
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Shallow and ultrashallow p-n junctions were formed in Si by stimulated diffusion of P from phosphosilicate glass and B from borosilicate glass under pulsed photon annealing. Electrical, photoelectric, and optical properties of these junctions were investigated. Special features of stimulated diffusion of P and B in surface layers of Si under pulsed photon annealing were revealed. The obtained results are discussed in terms of kick-out, pair vacancy-interstitial, and dissociative diffusion mechanisms. The features of the dopant concentration profiles are explained in terms of the vacancy-interstitial mechanism and the stimulated diffusion model with allowance made for the time dependence of the dopant surface concentration and the concentration dependence of the diffusivity. |
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| Cuvinte-cheie heterostructures, ion implantation, Heat Transport |
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