Gallium selenide is a layered crystal with outstanding nonlinear optical properties. Due to layered structure and weak van der Waals bonds it is perspective as two dimension material. GaSe possesses two-phonon absorption and can be uses in THz diapason. Investigation of optical properties is important for further development of optoelectronic devices on its base. In this work photoluminescence, reflection and absorption spectra of GaSe single crystals were studied in a wide temperature range (10 – 300 K). The presence of series of excitonic levels in the region E > Eg was shown. At excitation by 448 nm laser of GaSe crystal electrons were resonantly excited from V1(1) band to C1(6) and C2(5) bands. The luminescence from excitonic levels (nA = 1, 2 … 5) of conduction band C1(6) to valence band V1(1) was observed. Recombination from excitonic level of C1(6) band to V2 and V3 bands (maxima nB = 1 - 2.1751 eV and nB = 2 - 2.2222 eV) and to V4 and V5 bands (maxima nC = 1 – 2.311 eV and nC = 2 - 2.350 eV) was observed. Luminescence maxima nD = 1 (2.399 eV) and nD = 2 (2.434 eV) attributed to transitions between C1 – V6, V7 bands and E3 maximum caused by recombination C2 – V1 were found out. A model of energy bands responsible for observed transitions was suggested.