Design of new nonlinear optical materials based on porous III-V compounds

Tiginyanu Ion; Kravetsky Igor; Marowsky Gerd; Monecke Jochen; Hartnagel Hans Ludwig

Conţinutul numărului revistei

Articolul precedent

Articolul urmator

124

SM ISO690:2012

TIGINYANU, Ion, KRAVETSKY, Igor, MAROWSKY, Gerd, MONECKE, Jochen, HARTNAGEL, Hans Ludwig. Design of new nonlinear optical materials based on porous III-V compounds. In: Physica Status Solidi (B) Basic Research, 2000, vol. 221, pp. 557-560. ISSN 0370-1972. DOI: https://doi.org/10.1002/1521-3951(200009)221:1<557::AID-PSSB557>3.0.CO;2-6

EXPORT metadate:
Google Scholar
Crossref
CERIF

DataCite
Dublin Core

Physica Status Solidi (B) Basic Research

Volumul 221 / 2000 / ISSN 0370-1972

Design of new nonlinear optical materials based on porous III-V compounds

DOI:https://doi.org/10.1002/1521-3951(200009)221:1<557::AID-PSSB557>3.0.CO;2-6

Pag. 557-560

Tiginyanu Ion¹², Kravetsky Igor¹², Marowsky Gerd³, Monecke Jochen⁴, Hartnagel Hans Ludwig⁵

¹ Institute of Applied Physics, Academy of Sciences of Moldova,
² Technical University of Moldova,
³ Laser Laboratory Goettingen,
⁴ Institut für Theoretische Physik, TU Bergakademie Freiberg,
⁵ Technical University Darmstadt

Disponibil în IBN: 19 septembrie 2023

Vezi articolul

Rezumat

Bulk and porous membranes of gallium phosphide have been characterized by optical second harmonic generation (SHG) technique using a 1064 nm pump beam. The porous membranes prove to exhibit an enhanced SHG in comparison with the bulk material. Taking into account the porosity-induced anisotropy we show analytically that the phase matching conditions can be fulfilled for membranes possessing a degree of porosity higher than 30%.

Cuvinte-cheie
Electrochemical etching, III-V semiconductors, Indium Phosphides

Dublin Core Export

<?xml version='1.0' encoding='utf-8'?>
<oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'>
<dc:creator>Tighineanu, I.M.</dc:creator>
<dc:creator>Cravetchi, I.V.</dc:creator>
<dc:creator>Marowsky, G.</dc:creator>
<dc:creator>Monecke, J.</dc:creator>
<dc:creator>Hartnagel, H.</dc:creator>
<dc:date>2000-09-01</dc:date>
<dc:description xml:lang='en'><p>Bulk and porous membranes of gallium phosphide have been characterized by optical second harmonic generation (SHG) technique using a 1064 nm pump beam. The porous membranes prove to exhibit an enhanced SHG in comparison with the bulk material. Taking into account the porosity-induced anisotropy we show analytically that the phase matching conditions can be fulfilled for membranes possessing a degree of porosity higher than 30%.</p></dc:description>
<dc:identifier>10.1002/1521-3951(200009)221:1<557::AID-PSSB557>3.0.CO;2-6</dc:identifier>
<dc:source>Physica Status Solidi (B) Basic Research  () 557-560</dc:source>
<dc:subject>Electrochemical etching</dc:subject>
<dc:subject>III-V semiconductors</dc:subject>
<dc:subject>Indium Phosphides</dc:subject>
<dc:title>Design of new nonlinear optical materials based on porous III-V compounds</dc:title>
<dc:type>info:eu-repo/semantics/article</dc:type>
</oai_dc:dc>