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 SM ISO690:2012LAIHO, Reino, LASHKUL, Alexander V., LISUNOV, Konstantin, LÄHDERANTA, Erkki. Shubnikov-de Haas effect in n-CdSb:In under pressure. In: Semiconductor Science and Technology, 2009, vol. 24, pp. 1-7. ISSN 0268-1242. DOI: https://doi.org/10.1088/0268-1242/24/9/095023 |
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  Semiconductor Science and Technology |
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| Volumul 24 / 2009 / ISSN 0268-1242 | ||||||
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| DOI:https://doi.org/10.1088/0268-1242/24/9/095023 | ||||||
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Magnetoresistance (MR) of single crystals of the group H-V semiconductor n-CdSb doped with In is investigated in magnetic fields B up to 7 T and temperatures T between 1.2 and 2.4 K under hydrostatic pressure p = 0-10 kbar. Shubnikov-de Haas (SdH) oscillations of MR observed up to B ~ 4 T are characterized by a single period, giving evidence for one participating group of conduction band electrons. Pressure dependence of the SdH period and concentration reveal a second group of charge carriers, connected to a resonance impurity band with delocalized states. The SdH amplitude, A, exhibits non-universal behavior attributable to its sensitivity to scattering mechanism at low quantum numbers. The parameters characterizing the non-universality of A(T) and the pressure dependence of the cyclotron effective mass, m c(p), and of the concentration of conduction electrons, sdH, are given. The dependences of mc(p) and the Fermi energy on pressure are consistent with Kane-type non-parabolicity of the conduction band. |
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| Cuvinte-cheie Conduction bands, Crystal impurities, Electric resistance, Electron mobility, Galvanomagnetic Effects, Hydrostatic pressure, Magnetic fields, Quantum theory, Semiconducting organic compounds, Shubnikov-de Haas effect, single crystals |
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