Sharp variations in the temperature dependence of optical reflectivity from AlN/GaN heterostructures

Ursachi Veaceslav; Tiginyanu Ion; Syrbu Nicolae; Zalamai Victor; Hubbard Seth M.; Pavlidis Dimitris

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URSACHI, Veaceslav, TIGINYANU, Ion, SYRBU, Nicolae, ZALAMAI, Victor, HUBBARD, Seth M., PAVLIDIS, Dimitris. Sharp variations in the temperature dependence of optical reflectivity from AlN/GaN heterostructures. In: Semiconductor Science and Technology, 2003, vol. 18, pp. 9-11. ISSN 0268-1242. DOI: https://doi.org/10.1088/0268-1242/18/2/101

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Semiconductor Science and Technology

Volumul 18 / 2003 / ISSN 0268-1242

Sharp variations in the temperature dependence of optical reflectivity from AlN/GaN heterostructures

DOI:https://doi.org/10.1088/0268-1242/18/2/101

Pag. 9-11

Ursachi Veaceslav¹², Tiginyanu Ion¹², Syrbu Nicolae¹², Zalamai Victor¹², Hubbard Seth M.³, Pavlidis Dimitris³

¹ Institute of Applied Physics, Academy of Sciences of Moldova,
² Technical University of Moldova,
³ University of Michigan

Disponibil în IBN: 31 august 2023

Rezumat

Sharp variations in optical reflectivity were observed when cooling and heating AlN/GaN heterostructures on sapphire substrates between room temperature and 10 K. The reflectivity was found to decrease at a definite temperature T_k in the downward temperature run, and to recover at T_r > T_k in the subsequent upward temperature run. The temperature behaviour of reflectivity exhibits memory on the cooling-heating cycles previously subjected to samples.

Cuvinte-cheie
Aluminum nitride, cooling, Gallium nitride, heating, Light reflection, Optoelectronic devices, Thermal effects

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