Electrical and photoluminescence properties of CulnSe2 single crystals
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SCHON, Jan Hendrik, ARUSHANOV, Ernest, KLOC, Christian L., BUCHER, Ernst. Electrical and photoluminescence properties of CulnSe2 single crystals. In: Journal of Applied Physics, 1997, vol. 81, pp. 6205-6209. ISSN 0021-8979. DOI: https://doi.org/10.1063/1.364405
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Journal of Applied Physics
Volumul 81 / 1997 / ISSN 0021-8979 /ISSNe 1089-7550

Electrical and photoluminescence properties of CulnSe2 single crystals

DOI:https://doi.org/10.1063/1.364405

Pag. 6205-6209

Schon Jan Hendrik1, Arushanov Ernest12, Kloc Christian L.1, Bucher Ernst1
 
1 University of Konstanz,
2 Institute of Applied Physics, Academy of Sciences of Moldova
 
 
Disponibil în IBN: 31 iulie 2023


Rezumat

Electrical and photoluminescence measurements have been carried out on CuInSe2 single crystals. The observed temperature dependence of the Hall coefficient in n-type CuInSe2 single crystals is explained in assuming the existence of an impurtiry band. The values of the activation energy of the shallow donors, their concentration, and the concentration of the compensating acceptors were calculated. The values of the activation energy of the deep donors (80±10 meV and 110±10 meV) were estimated on the basis of the photoluminescence measurements. The concentration dependence of the activation energy of the shallow donor level and the variation of the Coulomb interaction as a function of the carrier density are determined.