Electron spectrum of magnetic interface structures based on narrow-gap semiconductors
Закрыть
Conţinutul numărului revistei
Articolul precedent
Articolul urmator
135 0
SM ISO690:2012
MALKOVA, Natalia, GOMEZ, Ignacio, DOMINGUEZ-ADAME, F.. Electron spectrum of magnetic interface structures based on narrow-gap semiconductors. In: Physical Review B - Condensed Matter and Materials Physics, 2001, vol. 63, pp. 353171 -353176. ISSN 1098-0121. DOI: https://doi.org/10.1103/physrevb.63.035317
EXPORT metadate:
Google Scholar
Crossref
CERIF

DataCite
Dublin Core
Physical Review B - Condensed Matter and Materials Physics
Volumul 63 / 2001 / ISSN 1098-0121 /ISSNe 1550-235X

Electron spectrum of magnetic interface structures based on narrow-gap semiconductors

DOI:https://doi.org/10.1103/physrevb.63.035317

Pag. 353171 -353176

Malkova Natalia1, Gomez Ignacio2, Dominguez-Adame F.2
 
1 Institute of Applied Physics, Academy of Sciences of Moldova,
2 Universidad Complutense de Madrid
 
 
Disponibil în IBN: 6 iulie 2023


Rezumat

In this work we deal with magnetic junction structures in which a homogeneous narrow-gap semiconductor is subjected to an inhomogeneous magnetic field. The aim of the paper is to elucidate magnetic field effects on the electron energy spectrum of narrow-gap semiconductors in inhomogeneous magnetic fields. The two-band Dirac model is used as a model Hamiltonian. Spectra and wave functions for the magnetic junction are obtained. Wave functions for the lowest quasi Landau levels are strongly localized near the interface plane showing the characteristic properties of snake orbits. The spin properties of the quasi Landau levels are studied.

Cuvinte-cheie
article, electron transport, magnetic field, magnetism, mathematical analysis, molecular model, nanoparticle, semiconductor