Surface state band mobility and thermopower in semiconducting bismuth nanowires
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HUBER, Tito, ADEYEYE, A., NIKOLAEVA, Albina, KONOPKO, Leonid, JOHNSON, R. C., GRAF, Michael J.. Surface state band mobility and thermopower in semiconducting bismuth nanowires. In: Physical Review B - Condensed Matter and Materials Physics, 2011, vol. 83, pp. 1-21. ISSN 1098-0121. DOI: https://doi.org/10.1103/PhysRevB.83.235414
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Physical Review B - Condensed Matter and Materials Physics
Volumul 83 / 2011 / ISSN 1098-0121 /ISSNe 1550-235X

Surface state band mobility and thermopower in semiconducting bismuth nanowires

DOI:https://doi.org/10.1103/PhysRevB.83.235414

Pag. 1-21

Huber Tito1, Adeyeye A.1, Nikolaeva Albina23, Konopko Leonid23, Johnson R. C.4, Graf Michael J.4
 
1 Howard University,
2 Institute of Electronic Engineering and Industrial Technologies, Academy of Sciences of Moldova,
3 International Laboratory of High Magnetic Fields and Low Temperatures,
4 Boston College, Department of Physics, Chestnut Hill
 
 
Disponibil în IBN: 27 iunie 2023


Rezumat

 Many thermoelectrics such as Bi exhibit Rashba spin-orbit surface bands for which topological insulator behavior consisting of ultrahigh mobilities and enhanced thermopower has been predicted. Bi nanowires realize surface-only electronic transport since they become bulk insulators when they undergo the bulk semimetal-semiconductor transition as a result of quantum confinement for diameters close to 50 nm. We studied 20, 30, 50, and 200 nm trigonal Bi wires. Shubnikov-de Haas magnetoresistance oscillations caused by surface electrons and bulklike holes enable the determination of their densities and mobilities. Surface electrons have high mobilities exceeding 2 m2 sec-1 V -1 and contribute strongly to the thermopower, dominating for temperatures T < 100 K. The surface thermopower is -1.2 T μV/K2, a value that is consistent with theory, raising the prospect of developing nanoscale thermoelectrics based on surface bands. 

Cuvinte-cheie
Bismuth, thermoelectric, thin films