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| Articolul precedent |
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 SM ISO690:2012KOSTER, Soren A., MOSHNYAGA, Vasily T., SAMWER, Konrad H., LEBEDEV, Oleg, VANTENDELOO, G, SHAPOVAL, Oleg M., BELENCHUK, Alexandr. Doping of interfaces in (La0.7Sr0.3MnO 3)1-x:(MgO)x composite films. In: Applied Physics Letters, 2002, vol. 81, pp. 1648-1650. ISSN 0003-6951. DOI: https://doi.org/10.1063/1.1503849 |
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  Applied Physics Letters |
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| Volumul 81 / 2002 / ISSN 0003-6951 /ISSNe 1077-3118 | |
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| DOI:https://doi.org/10.1063/1.1503849 | |
| Pag. 1648-1650 | |
| Rezumat | |
Composite thin films of (La0.7Sr0.3MnO 3)1-x:(MgO)x (x=0-0.5) were grown on Al 2O3 (0001) substrates by a metalorganic aerosol deposition technique. A columnar growth of the films with the predominance of (111)- and (1̄10)-orientation was observed. Pure films (x=0) show a Curie temperature of TC=362K, a metallic behavior accompanied with a low residual resistivity ρ∼10-4cm at T=4.2K and a very small low-field magnetoresistance. Low amounts of MgO doping, x=0.05, result in a totally different electrical transport behavior which is a pronounced low-field magnetoresistance MR=25% at T=4.2K. The MgO was found to be located at the interfaces between the grains thus building tunneling barriers and enhancing spin polarized tunneling similar to a system with vertical artificial tunnel junctions. |
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| Cuvinte-cheie deposition, Electric resistance, Magnetoelectronics, Magnetoresistance, manganese oxide, Semiconductor doping, Tunnel junctions |
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