Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching
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TIGINYANU, Ion, URSACHI, Veaceslav, ZALAMAI, Victor, LANGA, Sergiu, HUBBARD, Seth M., PAVLIDIS, Dimitris, FOLL, Helmut. Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching. In: Applied Physics Letters, 2003, vol. 83, pp. 1551-1553. ISSN 0003-6951. DOI: https://doi.org/10.1063/1.1605231
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Applied Physics Letters
Volumul 83 / 2003 / ISSN 0003-6951

Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching

DOI:https://doi.org/10.1063/1.1605231

Pag. 1551-1553

Tiginyanu Ion12, Ursachi Veaceslav12, Zalamai Victor12, Langa Sergiu12, Hubbard Seth M.3, Pavlidis Dimitris3, Foll Helmut4
 
1 Institute of Applied Physics, Academy of Sciences of Moldova,
2 Technical University of Moldova,
3 University of Michigan,
4 Christian-Albrechts University of Kiel
 
 
Disponibil în IBN: 15 iunie 2023


Rezumat

A study was performed on luminescence of GaN nanocolumns, which were obtained by photon-assisted anodic etching. The metalorganic chemical vapor deposition technique was used for the purpose. The photoluminescence spectroscopy characterization revealed that the as-grown bulk GaN layers suffered from compressive biaxial strain of 0.5 GPa.

Cuvinte-cheie
Anodes, etching, Excitons, Metallorganic chemical vapor deposition, Nanostructured materials, photoluminescence, Photons, strain