Conţinutul numărului revistei |
Articolul precedent |
Articolul urmator |
169 0 |
SM ISO690:2012 TIGINYANU, Ion, URSACHI, Veaceslav, ZALAMAI, Victor, LANGA, Sergiu, HUBBARD, Seth M., PAVLIDIS, Dimitris, FOLL, Helmut. Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching. In: Applied Physics Letters, 2003, vol. 83, pp. 1551-1553. ISSN 0003-6951. DOI: https://doi.org/10.1063/1.1605231 |
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Applied Physics Letters | ||||||
Volumul 83 / 2003 / ISSN 0003-6951 | ||||||
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DOI:https://doi.org/10.1063/1.1605231 | ||||||
Pag. 1551-1553 | ||||||
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Rezumat | ||||||
A study was performed on luminescence of GaN nanocolumns, which were obtained by photon-assisted anodic etching. The metalorganic chemical vapor deposition technique was used for the purpose. The photoluminescence spectroscopy characterization revealed that the as-grown bulk GaN layers suffered from compressive biaxial strain of 0.5 GPa. |
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Cuvinte-cheie Anodes, etching, Excitons, Metallorganic chemical vapor deposition, Nanostructured materials, photoluminescence, Photons, strain |
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