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 SM ISO690:2012ДОСТАНКО, А., БАРАНОВ, В., АНУФРИЕВ, Л., КОСТЮКЕВИЧ, А., ЗЕЛЕНКОВ, В.. Повышение стабильности твердотельных структур при ионной бомбардировке. In: Электронная обработка материалов, 2001, nr. 1(37), pp. 43-45. ISSN 0013-5739. |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
 Электронная обработка материалов |
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| Numărul 1(37) / 2001 / ISSN 0013-5739 /ISSNe 2345-1718 | ||||||
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| Pag. 43-45 | ||||||
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Some parameters, including bombardment by noble gas ions in conjunction with thermal treatment, that influent on solid-state structures stability have been discussed. The ion-stimulated diffusion of silicon was occurred during the ion bombardment and a stable interface was formed. The required electricalphysical properties and stability of Si/Мо Schottky diodes might be achieved by combining ion bombardment and isothermal annealing at temperatures up to - 4500С or infrared treatment. |
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