Conţinutul numărului revistei |
Articolul precedent |
Articolul urmator |
139 0 |
SM ISO690:2012 САФАРОВ, А., ШУКУРОВА, Д., ИКРAМОВ, А., АРСЛАНОВА, Т.. Исследование механизма образования и скорости изменения неравновесных точечных дефектов в процессе окисления кремния. In: Электронная обработка материалов, 2003, nr. 6(39), pp. 85-88. ISSN 0013-5739. |
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Электронная обработка материалов | ||||||
Numărul 6(39) / 2003 / ISSN 0013-5739 /ISSNe 2345-1718 | ||||||
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Pag. 85-88 | ||||||
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In the work mentioned, that density of surface charges can be increased with difference of contact potentials (DCP). Proved, that starting from depth of about 0,4 micrometers increase in anode oxidation speed is observed. Possibility determination of distribution profile of monolegirrated mixtures through the semiconductors depth is proved. |
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