Влияние деформации на спектры гашения фотопроводимости в сильнокомпенсированном кремнии
Закрыть
Conţinutul numărului revistei
Articolul precedent
Articolul urmator
262 0
SM ISO690:2012
БАХАДИРХАНОВ, М., ИЛИЕВ, Х., ЗИКРИЛЛАЕВ, Н., ВАЛИЕВ, С., НОРОВ, Ш.. Влияние деформации на спектры гашения фотопроводимости в сильнокомпенсированном кремнии. In: Электронная обработка материалов, 2003, nr. 5(39), pp. 86-88. ISSN 0013-5739.
EXPORT metadate:
Google Scholar
Crossref
CERIF

DataCite
Dublin Core
Электронная обработка материалов
Numărul 5(39) / 2003 / ISSN 0013-5739 /ISSNe 2345-1718

Влияние деформации на спектры гашения фотопроводимости в сильнокомпенсированном кремнии


Pag. 86-88

Бахадирханов М., Илиев Х., Зикриллаев Н., Валиев С., Норов Ш.
 
Ташкентский государственный технический университет
 
 
Disponibil în IBN: 13 mai 2023


Rezumat

The basis of research of influencing of monaxonicly elastic compression on spectra of damping of photoconductivity in Si<B,Mn> is determined the physical gear change of a photocurrent and barometric factor of displacement of a steep level of manganese. In spectral relation of a photo of conductance, at simultaneous illumination by monochromatic and integral light, for is model Si<B,Mn> with a degree of compensation K ≥ 0,9 since energy of a homo geneous light the hv = 0,62 eV, is watched sharp decreasing of a photo current, the infra-red damping of photoconductivity is observed. It testifies definition volume, that accountable center behind damping photoconducnivity is manganese in an interstitial condition Mn++ with the electronic configuration 3d54s0 and level obtained Ec - 0,5 eV as a result of compensation by small-sized acceptors of a boron. Infra-red decreasing photoconductivity descends because of electron transition to a level of manganese in a conduction band and its further acquisition on a level of a recombination Nr, which one then catches a vacant electron site. The basis of research of influencing of monaxonicly elastic compression on spectra of damping of photoconductivity in Si<B,Mn> is determined the physical gear change of a photocurrent and barometric factor of displacement of a steep level of manganese.